for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 258 linear & power amplifiers - smt hmc464lp5 / 464LP5E gaas phemt mmic power amplifier, 2 - 20 ghz v03.0308 general description features functional diagram the hmc464lp5 & hmc464LP5E are gaas mmic phemt distributed power ampli ers in leadless 5 x 5 mm surface mount packages which operate bet- ween 2 and 20 ghz. the ampli er provides 14 db of gain, +30 dbm output ip3 and +26 dbm of output power at 1 db gain compression while requiring 290 ma from a +8v supply. gain atness is good from 2 - 18 ghz making the hmc464lp5(e) ideal for ew, ecm and radar driver ampli ers as well as test equipment applications. the wideband ampli er i/os are internally matched to 50 ohms. p1db output power: +26 dbm gain: 14 db output ip3: +30 dbm supply voltage: +8v @ 290 ma 50 ohm matched input/output 25 mm 2 leadless smt package typical applications the hmc464lp5 / hmc464LP5E is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military ew, ecm & c 3 i ? test instrumentation ? fiber optics electrical speci cations, t a = +25 c, vdd= 8v, vgg2= 3v, idd= 290 ma [1] parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 2.0 - 6.0 6.0 - 16.0 16.0 - 20.0 ghz gain 12 14 11.5 13.5 8 11 db gain flatness 0.5 0.5 1.0 db gain variation over temperature 0.025 0.035 0.03 0.04 0.05 0.06 db/ c input return loss 15 10 7 db output return loss 15 9 11 db output power for 1 db compression (p1db) 23.5 26.5 22 25 18 21 dbm saturated output power (psat) 27.5 26 24.0 dbm output third order intercept (ip3) 32 26 22 dbm noise figure 4.0 4.0 6.0 db supply current (idd) (vdd= 8v, vgg= -0.5v typ.) 290 290 290 ma [1] adjust vgg1 between -2 to 0v to achieve idd = 290 ma typical.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 259 output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -30 -25 -20 -15 -10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 22 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c return loss (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c noise figure (db) frequency (ghz) hmc464lp5 / 464LP5E gaas phemt mmic power amplifier, 2 - 20 ghz v03.0308
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 260 linear & power amplifiers - smt p1db vs. temperature psat vs. temperature output ip3 vs. temperature gain, power & output ip3 vs. supply voltage @ 10 ghz, fixed vgg1 absolute maximum ratings drain bias voltage (vdd) +9 vdc gate bias voltage (vgg1) -2 to 0 vdc gate bias voltage (vgg2) (vdd -8.0) vdc to vdd rf input power (rfin)(vdd = +8 vdc) +20 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 51.5 mw/c above 85 c) 3.35 w thermal resistance (channel to ground paddle) 19.4 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a vdd (v) idd (ma) +7.5 292 +8.0 290 +8.5 288 typical supply current vs. vdd 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c p1db (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c psat (dbm) frequency (ghz) 16 18 20 22 24 26 28 30 32 34 36 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c ip3 (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 32 7.5 8 8.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm ) vdd (v) hmc464lp5 / 464LP5E gaas phemt mmic power amplifier, 2 - 20 ghz v03.0308 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 261 outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative. 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. part number package body material lead finish msl rating package marking [3] hmc464lp5 low stress injection molded plastic sn/pb solder msl1 [1] h464 xxxx hmc464LP5E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h464 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information hmc464lp5 / 464LP5E gaas phemt mmic power amplifier, 2 - 20 ghz v03.0308
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 262 linear & power amplifiers - smt application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee or external bias network. pin number function description interface schematic 5 rfin this pin is ac coupled and matched to 50 ohms. 15 vgg1 gate control for ampli er. adjust between -2 to 0v to achieve idd= 290 ma. 21 rfout & vdd rf output for ampli er. connect the dc bias (vdd) network to provide drain current (idd). see application circuit herein. 30 vgg2 control voltage for ampli er. +3v should be applied to vgg2 for nominal operation. ground paddle gnd ground paddle must be connected to rf/dc ground. 1 - 4, 6 - 14, 16 - 20, 22 - 29, 31, 32 n/c no connection. these pins may be connected to rf ground. performance will not be affected. pin descriptions hmc464lp5 / 464LP5E gaas phemt mmic power amplifier, 2 - 20 ghz v03.0308
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 263 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108344 [1] item description j1, j2 pcb mount sma connector j3, j4 2 mm molex header c1, c2 100 pf capacitor, 0402 pkg. c3, c4 1000 pf capacitor, 0603 pkg. c5, c6 4.7 f capacitor, tantalum u1 hmc464lp5 / hmc464LP5E pcb [2] 109762 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc464lp5 / 464LP5E gaas phemt mmic power amplifier, 2 - 20 ghz v03.0308
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